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参数资料
| 型号： | MRF9180R6 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-1230, CASE 375D-04, 4 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 333K |
| 代理商： | MRF9180R6 |
MRF9180R6
MOTOROLA RF DEVICE DATA
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of this device make it ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2
700 mA
IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 17 dB
Efficiency — 26%
Adjacent Channel Power -
750 kHz: -45.0 dBc @ 30 kHz BW
1.98 MHz: -60.0 dBc @ 30 kHz BW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
388
2.22
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
RθJC
0.45
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9180/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF9180R6
880 MHz, 170 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-04, STYLE 1
NI-1230
Motorola, Inc. 2004
REV 8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9180S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9200LR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:N−Channel Enhancement−Mode Lateral MOSFETs |
| MRF9200LR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9200LSR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9210 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
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