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参数资料
| 型号： | MRF9511LT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | CAP CERAMIC 5.1PF 25V C0G 0201 |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 318A-05, 4 PIN |
| 文件页数： | 2/16页 |
| 文件大小： | 215K |
| 代理商： | MRF9511LT1 |
MMBR951 MRF957 MRF9511 SERIES
2
MOTOROLA RF DEVICE DATA
MAXIMUM RATINGS
Rating
Symbol
MMBR951LT1
MMBR951ALT1
MRF9511LT1
MRF957T1
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PD(max)
10
10
10
Vdc
Collector–Base Voltage
20
20
20
Vdc
Emitter–Base Voltage
1.5
1.5
15
Vdc
Power Dissipation (1) TC = 75
°
C
Derate linearly above Tcase = 75
°
C @
0.322
4.29
0.322
4.29
0.227
3.03
Watts
mW/
°
C
Collector Current — Continuous (2)
IC
100
100
100
mA
Maximum Junction Temperature
TJmax
Tstg
R
θ
JC
150
150
150
°
C
Storage Temperature
–55 to +150
–55 to +150
–55 to +150
°
C
Thermal Resistance, Junction to Case
233
233
330
°
C/W
DEVICE MARKING
MRF9511LT1 = 11
MMBR951ALT1 = AAG
MMBR951LT1 = 7Z
MRF957T1 = B
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(3)
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
V(BR)CEO
10
13
—
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
20
25
—
Vdc
Emitter Cutoff Current
(VEB = 1.0 V, IC = 0)
IEBO
—
—
0.1
μ
Adc
Collector Cutoff Current
(VCB = 10 V, IE = 0)
ICBO
—
—
0.1
μ
Adc
ON CHARACTERISTICS
(3)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA)
(VCE = 6.0 V, IC = 5.0 mA)
All
MMBR951ALT1
hFE
50
75
—
—
200
150
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Ccb
—
0.45
1.0
pF
Current Gain — Bandwidth Product
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
MRF9511LT1, MMBR951LT1, MMBR951ALT1
MRF957T1
fT
—
—
8.0
9.0
—
—
GHz
NOTES:
1. To calculate the junction temperature use TJ = (PD x R
θ
JA) + TCASE. Case temperature measured on collector lead immediately adjacent
to body of package.
2. IC — Continuous (MTBF
≈
10 years).
3. Pulse width
≤
300
μ
s, duty cycle
≤
2% pulsed.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF951V2 | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF951V3 | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF951V4 | 功能描述:射频双极小信号晶体管 RF Bipolar Trans RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| MRF957 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN Silicon Low Noise, High-Frequency Transistors |
| MRF957T1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN Silicon Low Noise, High-Frequency Transistors |
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