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参数资料
| 型号： | MRF951V3 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/1页 |
| 文件大小： | 42K |
| 代理商： | MRF951V3 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 0.1 mA
20
V
BVCEO
IC = 0.1 mA
10
V
ICBO
VCB = 10 V
0.1
A
IEBO
VEB = 1.0 V
0.1
A
hFE
VCE = 6.0 V
IC = 5.0 mA
50
200
---
Ccb
VCB = 10 V
f = 1.0 MHz
0.45
pF
GNF
VCE = 6.0 V
IC = 5.0 mA
f = 1.0 GHz
f = 2.0 GHz
14
9.0
dB
NF50
VCE = 6.0 V
IC = 5.0 mA
f = 1.0 GHz
1.9
2.8
dB
NPN SILICON RF TRANSISTOR
MRF951V3
DESCRIPTION:
The ASI
MRF951V3 is Designed for
high gain. Low noise small-signal
amplifiers applications up to 2.0 GHz.
FEATURES:
Low Noise Figure
High Gain
Omnigold Metalization System
MAXIMUM RATINGS
IC
100 mA
VCBO
20 V
VCEO
10 V
VEBO
1.5 V
PDISS
1.0 W @ TC = 25 °C
TJ
-65 °C to +150 °C
TSTG
-65 °C to +150 °C
θ
JC
100 °C/W
PACKAGE STYLE
Dim. Are in mm
Leads 1 and 3 = Emitter
2 = Collector
4 = Base
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF951V4 | 功能描述:射频双极小信号晶体管 RF Bipolar Trans RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| MRF957 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN Silicon Low Noise, High-Frequency Transistors |
| MRF957T1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN Silicon Low Noise, High-Frequency Transistors |
| MRF9582NT1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Silicon Lateral FET, N -Channel Enhancement-Mode MOSFET |
| MRF959T1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LOW NOISE TRANSISTORS |
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