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参数资料
| 型号： | MS1005 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | PLASTIC, M153, 6 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 63K |
| 代理商： | MS1005 |
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
Copyright
2000
MSCXXXX.PDF 2000-11-06
WWW.
M
icr
o
sem
i
.COM
MS1005
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
R F P R O D UCT S
DI VI SI ON
DESCRIP T ION
The MS1005 is a silicon NPN Transistor designed for
telecommunications in HF and VHF frequency bands. This device
utilizes gold metallized die with diffused emitter resistors to achieve
high reliability and ruggedness.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURE S
!"30 MHz
!"40 Volts
!"IMD –30 dB
!"Common Emitter
!"Gold Metallization
!"
POUT = 200 W Min.
!"
GP = 16db Gain
AP
APPLICATIONS/BENEFITS
PLICATIONS/BENEFITS
!"HF SSB Applications
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25°°°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Device Current
40
A
PDISS
Power Dissipation
330
W
TJ
Junction Temperature
+200
°C
TSTG
Storage Temperature
-65 to +150
°C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
0.36
°C/W
MM
SS
11
00
55
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