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参数资料
| 型号： | MS1506 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.380 INCH, PLASTIC, M135, 4 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 85K |
| 代理商： | MS1506 |
MS1506
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
DESCRIPTION:
The MS1506 is a 13.6 volt Class C epitaxial silicon NPN planar
transistor designed primarily for VHF communications. The
MS1506 utilizes an emitter ballasted die geometry to withstand
severe load mismatch conditions.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
VCBO
Collector-Base Voltage
36
V
VCEO
Collector-Emitter Voltage
18
V
VCES
Collector-Emitter Voltage
36
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Device Current
8.0
A
PDISS
Power Dissipation
70
W
TJ
Junction Temperature
+200
°°C
TSTG
Storage Temperature
-65 to +150
°°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
1.2
°°C/W
Features
160 MHz
13.6 VOLTS
POUT = 40 WATTS
G
P = 9.0 dB MINIMUM
COMMON EMITTER CONFIGURATION
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相关代理商/技术参数 |
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| MS1507 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 18V 8A 4-Pin Style M113 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT 制造商:Microsemi 功能描述:Trans GP BJT NPN 18V 8A 4-Pin Style M113 |
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