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参数资料
| 型号： | MS2228 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, HERMETIC SEALED, M214, FM-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 85K |
| 代理商： | MS2228 |
MS2228
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
DESCRIPTION:
The MS2228 device is a high power Class C transistor specifically
designed for L-Band Avionics transponder/interrogator pulsed
output and driver applications.
This device is capable of operation over a wide range of pulse widths,
duty cycles, and is capable of withstanding 10:1 output VSWR at
rated RF conditions. Internal input and output matching provide
optimum performance and product consistency.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation
175
W
IC
Device Current
5.4
A
Vcc
Collector-Supply Voltage
55
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
-65 to +200
°C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
0.86
°C/W
Revision A, October 2009
Features
1090 MHz
50 VOLTS
P
OUT = 75 WATTS
G
P = 9.2 dB MINMUM
10:1 VSWR CAPABILITY
COMMON BASE CONFIGURATION
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