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参数资料
| 型号： | MS2603 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, HERMETIC SEALED, M218, 4 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 108K |
| 代理商： | MS2603 |
12-05-2002
MS2603
RF& MICROWAVE TRANSISTORS
S BAND RADAR APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation
40
W
IC
Device Current
1.8
A
VCC
Collector Supply Voltage
34
V
TJ
Junction Temperature
200
°°°°C
TSTG
Storage Temperature
-65 to +200
°°°°C
Thermal Data
RTH(J-C)
Junction - Case Thermal Resistance
3.75
°°°°C/W
Features
2.7 – 3.1 GHz
30 VOLTS
POUT = 5.5 WATTS
GP = 5.6 dB MINIMUM
GOLD METALLIZATION
INPUT/OUTPUT MATCHING
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2603 is a silicon NPN bipolar transistor designed
for pulsed S-Band radar applications.
The MS2603 is capable of operation over a wide range of
pulse widths and duty cycles. Internal impedance
matching and gold metalization provide consistent
broadband performance and long term reliability.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MS26036-149 | 制造商:HOLLINGSWORTH 功能描述:22-18awg No. 8 stud ring terminal - FAC STK |
| MS26036-150 | 制造商:HOLLINGSWORTH 功能描述:22-18awg 1/4 stud ring terminal - FAC STK |
| MS2604 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS |
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