参数资料
型号: MS2267
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.400 X 0.400 INCH, HERMETIC SEALED, M214, 2 PIN
文件页数: 1/6页
文件大小: 225K
代理商: MS2267
MS2267
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2267 is a high power Class C NPN transistor
specifically designed for TACAN/DME applications.
This device is capable of operation under moderate pulse
width and duty cycles. Low thermal resistance and
computerized automatic wire bonding techniques ensure
high reliability and product consistency.
The MS2267 utilizes an emitter ballasted die geometry
capable of operating into a 5:1 VSWR @ 1.0 dB overdrive.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation* (TC
≤≤ 90°°C)
575
W
IC
Device Current*
20
A
Vcc
Collector-Supply Voltage*
50
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°°C
TSTG
Storage Temperature
-65 to +200
°°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
(1)
0.28
°°C/W
* Applies only to rated RF amplifier operation
(1) Infra-red scan of hot spot junction temperature at rated RF operating conditions
Features
960 – 1215MHz
50 VOLTS
5:1 VSWR CAPABILITY @ RATED CONDITIONS
INPUT/OUTPUT MATCHING
P
OUT = 250 WATTS
G
P = 8.0 dB MINIMUM
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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