参数资料
型号: MRFE6S9060NR1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封装: ROHS COMPLIANT, PLASTIC, CASE 1265-09, TO-270-2, 3 PIN
文件页数: 14/15页
文件大小: 576K
代理商: MRFE6S9060NR1
8
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
TYPICAL CHARACTERISTICS
η
D,
DRAIN
EFFICIENCY
(%)
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
14
0
Pout, OUTPUT POWER (WATTS) CW
80
22
60
21
50
30
20
1
10
100
18
Gps
G
ps
,POWER
GAIN
(dB)
10
ηD
200
85
_C
20
19
40
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
VDD = 24 V
140
16
22
0
100
17
20
19
18
20
IDQ = 450 mA
f = 880 MHz
28 V
32 V
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 14 W Avg., and ηD = 32.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
107
106
105
110
130
150
170
190
MTTF
(HOURS)
210
230
17
70
25
_C
15
16
VDD = 28 Vdc
IDQ = 450 mA
f = 880 MHz
TC = 30_C
25
_C
85
_C
30
_C
21
40
60
80
120
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