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参数资料
| 型号： | MRFE6S9060NR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1265-09, TO-270-2, 3 PIN |
| 文件页数： | 9/15页 |
| 文件大小： | 576K |
| 代理商： | MRFE6S9060NR1 |
MRFE6S9060NR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920-960 MHz, 50 ohm system) VDD = 28 Vdc,
IDQ = 500 mA, Pout = 21 W Avg., f = 920-960 MHz, GSM EDGE Signal
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
46
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
-62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
-78
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920-960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA,
Pout = 60 W, f = 920-960 MHz
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
63
—
%
Input Return Loss
IRL
—
-12
—
dB
Pout @ 1 dB Compression Point
(f = 940 MHz)
P1dB
—
67
—
W
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, 865-900 MHz Bandwidth
Video Bandwidth @ 60 W PEP Pout where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
—
3
—
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout = 14 W Avg.
GF
—
0.27
—
dB
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.011
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.088
—
dBm/°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6S9060NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9125NBR1 | 功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9125NR1 | 功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9130HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9130HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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