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| 型号： | MRFE6S9201HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 3 PIN |
| 文件页数： | 9/13页 |
| 文件大小： | 487K |
| 代理商： | MRFE6S9201HSR3 |
MRFE6S9201HR3 MRFE6S9201HSR3
5
RF Device Data
Freescale Semiconductor
Table 5. MRFE6S9201HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Short RF Beads
2743019447ROP50
Fair-Rite
C1, C4, C5, C20, C39, C44
33 pF Chip Capacitors
ATC100B330JT500XT
ATC
C2, C3
10 μF, 50 V Tantalum Capacitors
T491C106K050AT
Kemet
C6, C32, C38, C43
0.6-4.5 pF Variable Capacitors, Gigatrim
27271SL
Johanson
C7, C12, C13, C14, C15, C16,
C17, C25
3.3 pF Chip Capacitors
ATC600F3R3BT250XT
ATC
C8, C9
4.7 pF Chip Capacitors
ATC600F4R7BT250XT
ATC
C10, C11
15 pF Chip Capacitors
ATC100B6R8JT500XT
ATC
C18, C19, C21, C22, C23, C24
1.0 pF Chip Capacitors
ATC600F1R0BT250XT
ATC
C26, C45
470 μF, 63 V Electrolytic Capacitors
EKMG630ELL331MJ20S
United Chemi-Con
C27, C34
1.2K pF Chip Capacitors
ATC100B1R2BT500XT
ATC
C28, C35
20K pF Chip Capacitors
ATC200B203MT50XT
ATC
C29, C31, C37, C46
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C30, C36
0.047 pF, 50 V Chip Capacitors
C1825C473J5RAC
Kemet
C33, C42
22 μF, 50 V Tantalum Capacitors
T491C226K050AT
Kemet
C40, C41
5.6 pF Chip Capacitors
ATC600F5R6BT250XT
ATC
R1, R2
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKEA
Vishay
R3, R4
1 KΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
Figure 2. MRFE6S9201HR3(HSR3) Test Circuit Component Layout
CUT
OUT
AREA
MRFE6S9201H/HS
Rev. 0
B1
R4
C2
C1
C4
R1
C7
C6
C9
R2
C8
C43
C5
C3
R3
B2
C45
C34 C35 C36
C37
C46
C33
C44
C11
C38
C32
C39
C27
C28 C30
C31
C26
C42
C29
C20
C10
C40
C41
C12
C15
C13
C14
C16
C17
C18
C19
C21
C23
C22
C24
C25
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相关代理商/技术参数 |
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| MRFE6S9201HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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