参数资料
型号: MRFE6VP8600HSR6
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, NI-1230S, CASE 375E-04, 4 PIN
文件页数: 11/20页
文件大小: 777K
代理商: MRFE6VP8600HSR6
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
19
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2011
Initial Release of Data Sheet
相关PDF资料
PDF描述
MRFE6VP8600HR5 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFE6VP8600HR6 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRFG35002N6AT1 C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
MRFG35002N6T1 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
MRFG35003MT1 S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
MRFE6VS25GNR1 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VS25LR5 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VS25N 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistor
MRFE6VS25NR1 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V TO270-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VS25NR1-CUT TAPE 制造商:Freescale 功能描述:MRFE6VS Series 2000 MHz 25 W 50 V N-Channel RF Power Mosfet - TO-270-2