参数资料
型号: MRFG35010AR1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
封装: ROHS COMPLIANT, NI-360HF, CASE 360D-02, 2 PIN
文件页数: 1/18页
文件大小: 420K
代理商: MRFG35010AR1
MRFG35010AR1
1
RF Device Data
Freescale Semiconductor
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WiMAX, WLL/MMDS or UMTS driver and final applications.
Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for
use in Class AB or Class A linear base station applications.
Typical Single-Carrier W-CDMA Performance: VDD = 12 Volts, IDQ =
140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain —10 dB
Drain Efficiency — 25%
ACPR @ 5 MHz Offset — -43 dBc in 3.84 MHz Channel Bandwidth
10 Watts P1dB @ 3550 MHz, CW
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
15
Vdc
Gate-Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
33
dBm
Storage Temperature Range
Tstg
-65 to +150
°C
Channel Temperature (1)
Tch
175
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1, 2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 10 W CW
Class AB
Case Temperature 79°C, 1 W CW
Class A
RθJC
4.0
4.1
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRFG35010A
Rev. 2, 12/2008
Freescale Semiconductor
Technical Data
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
CASE 360D-02, STYLE 1
NI-360HF
MRFG35010AR1
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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相关代理商/技术参数
参数描述
MRFG35010AR5 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
MRFG35010MR5 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
MRFG35010MT1 功能描述:MOSFET RF 3.5GHZ 9W 12V 1.5-PLD RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRFG35010N 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRFG35010NR5 功能描述:TRANSISTOR RF 9W 12V POWER FET RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR