参数资料
型号: MRW2003
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: MICROWAVE POWER TRANSISTORS
中文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
文件页数: 2/6页
文件大小: 102K
代理商: MRW2003
MRW2001 MRW2003
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (continued)
Emitter–Base Breakdown Voltage
(IE = 0.2 mA, IC = 0)
(IE = 0.25 mA, IC = 0)
MRW2001
MRW2003
V(BR)EBO
3.5
3.5
Vdc
Collector Cutoff Current
(VCB = 28 V, IE = 0)
MRW2001
MRW2003
ICBO
0.5
0.5
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
MRW2001
MRW2003
hFE
10
10
120
100
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, IE = 0, f = 1.0 MHz)
MRW2001
MRW2003
Cob
4.0
5.0
pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCE = 28 V, Pout = 1.0 W, f = 2.0 GHz)
MRW2001
GPB
9.0
dB
Common–Base Amplifier Power Gain
(VCE = 28 V, Pout = 3.0 W, f = 2.0 GHz)
MRW2003
GPB
8.0
dB
Collector Efficiency
(VCE = 28 V, Pout = 1.0 W, f = 2.0 GHz)
(VCE = 28 V, Pout = 3.0 W, f = 2.0 GHz)
MRW2001
MRW2003
η
40
%
Load Mismatch
(VCE = 28 V, f = 2.0 GHz, Load VSWR =
:1, All Phase Angles)
Pout = 1.0 W
Pout = 3.0 W
Saturated Output Power
(VCE = 28 V, f = 2.3 GHz)
(VCE = 28 V, f = 1.5 GHz)
(VCE = 28 V, f = 1.0 GHz)
(VCE = 28 V, f = 2.3 GHz)
(VCE = 28 V, f = 1.5 GHz)
(VCE = 28 V, f = 1.0 GHz)
MRW2001
MRW2003
ψ
No Degradation in Output Power
MRW2001
MRW2003
Psat1
Psat2
Psat3
1.0
1.2
1.3
3.0
3.7
4.0
W
相关PDF资料
PDF描述
MRW3001 MICROWAVE POWER TRANSISTORS
MRW3003 MICROWAVE POWER TRANSISTORS
MRW3005 MICROWAVE POWER TRANSISTORS
MS52C1161A 131,072-Word × 8-Bit STATIC RAM +2,097,152-Word × 8-Bit One Time PROM(128k字×8位静态RAM+2M×8 OTPROM)
MS52C1162A 65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM +1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字×16位或128k字×8位静态RAM+1M字×16位或2M字×8位 OTPROM)
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