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参数资料
| 型号： | MRW3003 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | MICROWAVE POWER TRANSISTORS |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 153K |
| 代理商： | MRW3003 |
2–1
MRW3001 MRW3003 MRW3005
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
Motorola, Inc. 1994
The RF Line
. . . designed primarily for large–signal output and driver amplifier stages in the
1.5 to 3.0 GHz frequency range.
Designed for Class B or C, Common Base Linear Power Amplifiers
Specified 28 Volt, 3.0 GHz Characteristics:
Output Power — 1.0 to 5.0 Watts
Power Gain — 5.0 to 7.0 dB Min
Collector Efficiency — 30% Min
Gold Metallization for Improved Reliability
Diffused Ballast Resistors
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
3001
3003
3005
Unit
Collector–Base Voltage
VCBO
VEBO
TJ
Tstg
45
Vdc
Emitter–Base Voltage
3.5
Vdc
Operating Junction Temperature
200
°
C
Storage Temperature Range
–65 to +200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, RF,
Junction to Case
R
θ
JC
35
17
8.5
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, VBE = 0)
(IC = 30 mA, VBE = 0)
(IC = 50 mA, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 1.0 mA, IE = 0)
(IC = 3.0 mA, IE = 0)
(IC = 5.0 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 1.0 mA, IC = 0)
Collector Cutoff Current
(VCB = 28 V, IE = 0)
MRW3001
MRW3003
MRW3005
V(BR)CES
50
50
50
—
—
—
—
—
—
Vdc
MRW3001
MRW3003
MRW3005
V(BR)CBO
45
45
45
—
—
—
—
—
—
Vdc
V(BR)EBO
3.5
—
—
Vdc
MRW3001
MRW3003
MRW3005
ICBO
—
—
—
—
—
—
0.5
0.75
1.25
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 5.0 V)
(IC = 300 mA, VCE = 5.0 V)
(IC = 500 mA, VCE = 5.0 V)
MRW3001
MRW3003
MRW3005
hFE
10
10
10
—
—
—
120
120
120
—
(continued)
Order this document
by MRW3001/D
SEMICONDUCTOR TECHNICAL DATA
5.0–7.0 dB
1.5–3.0 GHz
1.0–5.0 WATTS
MICROWAVE
POWER TRANSISTORS
CASE 328A–03, STYLE 1
(GP–13)
MRW3001, 3003, 3005
REV 6
相关PDF资料 |
PDF描述 |
|---|---|
| MRW3005 | MICROWAVE POWER TRANSISTORS |
| MS52C1161A | 131,072-Word × 8-Bit STATIC RAM +2,097,152-Word × 8-Bit One Time PROM(128k字×8位静态RAM+2M×8 OTPROM) |
| MS52C1162A | 65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM +1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字×16位或128k字×8位静态RAM+1M字×16位或2M字×8位 OTPROM) |
| MSB1218A-RT1 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| MSB1218A-RT1 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRW3003F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | FO-49 |
| MRW3005 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS |
| MRW3005F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | FO-49 |
| MRW53601 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRW54001 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE LINEAR POWER TRANSISTORS |
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