参数资料
型号: MRW3003
厂商: MOTOROLA INC
元件分类: 小信号晶体管
英文描述: MICROWAVE POWER TRANSISTORS
中文描述: S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件页数: 2/6页
文件大小: 153K
代理商: MRW3003
MRW3001 MRW3003 MRW3005
2–2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, IE = 0, f = 1.0 MHz)
MRW3001
MRW3003
MRW3005
Cob
3.5
5.7
8.4
4.0
7.0
10
pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCE = 28 V, Pout = 1.0 W, f = 3.0 GHz)
(VCE = 28 V, Pout = 3.0 W, f = 3.0 GHz)
(VCE = 28 V, Pout = 5.0 W, f = 3.0 GHz)
Collector Efficiency
(VCE = 28 V, Pout = 1.0 W, f = 3.0 GHz)
(VCE = 28 V, Pout = 3.0 W, f = 3.0 GHz)
(VCE = 28 V, Pout = 5.0 W, f = 3.0 GHz)
Load Mismatch
(VCE = 28 V, f = 3.0 GHz, Load VSWR =
:1, All Phase Angles)
Pout = 1.0 W
Pout = 3.0 W
Pout = 5.0 W
MRW3001
MRW3003
MRW3005
GPB
7.0
6.0
5.0
dB
MRW3001
MRW3003
MRW3005
η
c
30
30
30
%
MRW3001
MRW3003
MRW3005
ψ
No Degradation in Output Power
Figure 1. Output Power versus Input Power
MRW3001
TYPICAL CHARACTERISTICS
o
2.5
2
1.5
1
0.5
0
Pin, INPUT POWER (WATTS)
0
0.05
0.1
0.15
0.2
0.25
0.3
2 GHz
3 GHz
f = 1.5 GHz
2.3 GHz
2.5
2
1.5
1
0.5
0
1
f, FREQUENCY (GHz)
1.5
2
2.5
3
3.5
60
50
40
30
20
c
η
P
η
c @ 1 W
Po(sat)
0.4
0.6 0.8 1.0
1.5
2
3
4
5
10
0.2
3
2.3
2
f = 1.5 GHz
3
2.3
2
f = 1.5 GHz
Zo = 50
ZOL*
Zin
Figure 2. Psat and
η
versus Frequency
Figure 3. Series Equivalent Input/Output Impedance
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