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参数资料
| 型号： | MRW3003 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | MICROWAVE POWER TRANSISTORS |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 4/6页 |
| 文件大小： | 153K |
| 代理商： | MRW3003 |
MRW3001 MRW3003 MRW3005
2–4
MOTOROLA RF DEVICE DATA
MRW3005
TYPICAL CHARACTERISTICS
o
10
8
6
4
2
0
0.2
2 GHz
1.5 GHz
0.6
1
1.4
1.8
2.2
2.6
f = 3 GHz
2.3 GHz
14
1
f, FREQUENCY (GHz)
1.5
2
2.5
3
3.5
60
40
20
c
η
η
c @ 5 W
Po(sat)
12
10
8
6
4
3
2.3
f = 1.5 GHz
2
3
2.3
2
0.4
0.6 0.8 1.0
1.5
2
3
4
5
10
0.2
f = 1.5 GHz
Zo = 50
ZOL*
Zin
P
Psat, SATURATED OUTPUT POWER (WATTS)
Figure 7. Output Power versus Input Power
Figure 8. Psat and
η
versus Frequency
Figure 9. Series Equivalent Input/Output Impedance
The graph shown displays MTTF in hours x ampere2 emitter current
for each of the 3.0 GHz devices. Life tests at elevated temperatures
have correlated to better than
±
10% to the theoretical prediction for
metal failure.
CAUTION
— A calculation is required to obtain actual
metal life. Sample MTTF calculations based on operating conditions
are shown below.
Junction Temperature —
°
C
To calculate metal lifetime under any set of conditions, obtain actual
data or estimate from typical performance curves. Solve for TJ (
°
C):
Poutx 100
c%
(1) TJ =
θ
JF
MTTF Factor
(Normalized to 1.0 ampere2 Continuous Duty)
+ Pin – Pout
+ TFLANGE
Enter graph of MTF factor versus TJ. Obtain MTF factor. Calculate
metal life by:
(2) Metal Life in Hours =MTF Factor
IC2 (Amps)
M
10,000,000
1,000,000
100,000
10,000
1,000
100
230
210
190
170
150
130
TJ, JUNCTION TEMPERATURE (
°
C)
110
90
MRW3005
MRW3003
MRW3001
Figure 10. MTTF Factor versus
Junction Temperature
相关PDF资料 |
PDF描述 |
|---|---|
| MRW3005 | MICROWAVE POWER TRANSISTORS |
| MS52C1161A | 131,072-Word × 8-Bit STATIC RAM +2,097,152-Word × 8-Bit One Time PROM(128k字×8位静态RAM+2M×8 OTPROM) |
| MS52C1162A | 65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM +1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字×16位或128k字×8位静态RAM+1M字×16位或2M字×8位 OTPROM) |
| MSB1218A-RT1 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| MSB1218A-RT1 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRW3003F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | FO-49 |
| MRW3005 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS |
| MRW3005F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | FO-49 |
| MRW53601 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRW54001 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE LINEAR POWER TRANSISTORS |
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