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参数资料
| 型号： | MS1004 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | PLASTIC, M177, 4 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 146K |
| 代理商： | MS1004 |
MSCXXXX.PDF 05-19-99
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1004
DESCRIPTION:
The MS1004 is a 50V epitaxial silicon NPN planar transistor
designed primarily for SSB and VHF communications.
This device utilizes emitter ballasting for improved ruggedness
and reliability.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Device Current
40
A
PDISS
Total Dissipation
330
W
TJ
Junction Temperature
200
°°C
TSTG
Storage Temperature
-65 to +150
°°C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
0.4
°°C/W
Features
30 MHz
50 VOLTS
P
OUT = 250 WATTS
G
P = 14.5 dB MINIMUM
IMD = -30 dB
GOLD METALIZATION
COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
相关PDF资料 |
PDF描述 |
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| MS1006 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
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| MS1076 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MS1077 | HF BAND, Si, NPN, RF POWER TRANSISTOR |
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