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参数资料
| 型号： | MS1006 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.380 INCH, PLASTIC, M135, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 85K |
| 代理商： | MS1006 |
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
Copyright
2000
MSCXXXX.PDF 2000-11-06
WWW.
M
icr
o
sem
i
.COM
MS1006
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
R F P R O D UCT S DI VI SI ON
DESCRIP T ION
The MS1006 is a 50 V Class AB epitaxial silicon NPN planar
transistor designed primarily for SSB and VHF communications. This
device utilizes emitter ballasting for improved ruggedness and
reliability.
IMPORTANT: For the most current data, consult MICROSEMI’s website:
http://www.microsemi.com
KEY FEATURE S
!"Optimized for SSB
!"30 MHz
!"50 Volts
!"Common Emitter
!"Gold Metallization
!"
POUT = 75 W Min.
!"
GP = 14 dB Gain
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
SS
S
!"HF SSB Applications
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25°°°°C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
110
V
V
CEO
Collector-Emitter Voltage
55
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
3.25
A
P
DISS
Power Dissipation
127
W
T
J
Junction Temperature
+200
°C
T
STG
Storage Temperature
-65 to +150
°C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
2.0
°C/W
MM
SS11
0000
66
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