参数资料
型号: MS1051
元件分类: 功率晶体管
英文描述: HF BAND, Si, NPN, RF POWER TRANSISTOR
封装: PLASTIC, M174, 4 PIN
文件页数: 1/4页
文件大小: 88K
代理商: MS1051
MS1051
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for HF communications. This
device utilizes state-of-the-art diffused emitter ballasting to
achieve extreme ruggedness under severe operating
conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
36
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Device Current
20
A
PDISS
Power Dissipation
290
W
TJ
Junction Temperature
+200
°C
TSTG
Storage TEmperature
-65 to +150
°C
THERMAL DATA
RTH(J-C)
Thermal Resistance Junction-case
0.6
°C/W
Features
30 MHz
12.5 VOLTS
P
OUT = 100 WATTS
G
PE = 12.0 dB MINIMUM
IMD = –30 dBc
GOLD METALLIZATION
COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
HF SSB APLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Rev A 11/2005
相关PDF资料
PDF描述
MS1076A VHF BAND, Si, NPN, RF POWER TRANSISTOR
MS1076B VHF BAND, Si, NPN, RF POWER TRANSISTOR
MS1076E VHF BAND, Si, NPN, RF POWER TRANSISTOR
MS1076D VHF BAND, Si, NPN, RF POWER TRANSISTOR
MS1076G VHF BAND, Si, NPN, RF POWER TRANSISTOR
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