参数资料
型号: MS1080
元件分类: 功率晶体管
英文描述: HF BAND, Si, NPN, RF POWER TRANSISTOR
封装: PLASTIC, M174, 4 PIN
文件页数: 1/3页
文件大小: 214K
代理商: MS1080
053-7053 Rev - 10-2002
MS1080
DESCRIPTION:
The MS1080 is a 50 volt epitaxial NPN transistor designed
primarily for SSB communication equipment. This device
utilizes an emitter ballasted die geometry for maximum
ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector - Base Voltage
110
V
VCEO
Collector - Emitter Voltage
55
V
VEBO
Emitter - Base Voltage
4.0
V
IC
Device Current
12
A
PDISS
Power Dissipation
300
W
TJ
Junction Temperature
+200
°°°°C
TSTG
Storage Temperature
- 65 to +150
°°°°C
Thermal Data
RTH(J-C)
Junction - Case Thermal Resistance
0.55
°°°°C/W
Features
30 MHz
50 VOLTS
GOLD METALLIZATION
POUT = 220 W PEP
GP = 13 dB GAIN MINIMUM
COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
相关PDF资料
PDF描述
MS1202 VHF BAND, Si, NPN, RF POWER TRANSISTOR
MS1202 VHF BAND, Si, NPN, RF POWER TRANSISTOR
MS1226 HF BAND, Si, NPN, RF POWER TRANSISTOR
MS1227 HF BAND, Si, NPN, RF POWER TRANSISTOR
MS1251 VHF BAND, Si, NPN, RF POWER TRANSISTOR
相关代理商/技术参数
参数描述
MS-108-1 制造商:RRE 制造商全称:RRE 功能描述:Standard size Reed Sensor
MS-108-2 制造商:RRE 制造商全称:RRE 功能描述:Standard size Reed Sensor
MS-108295 制造商:AMPHENOL 制造商全称:AMPHENOL 功能描述:the interchangeability and operating characteristics are determined by U.S. Military Specifications.
MS-108-3 制造商:RRE 制造商全称:RRE 功能描述:Standard size Reed Sensor
MS-108-3-1 制造商:PIC 制造商全称:PIC 功能描述:Reed Sensor - pitch 20.32 mm