参数资料
型号: MS1226
元件分类: 功率晶体管
英文描述: HF BAND, Si, NPN, RF POWER TRANSISTOR
封装: PLASTIC, M113, 4 PIN
文件页数: 2/3页
文件大小: 453K
代理商: MS1226
053-7055 Rev - 10-2002
MS1226
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°°°°C)
C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVcbo
IC = 200 mA
IE = 0 mA
65
---
V
BVces
IC = 200 mA
VBE = 0 V
65
---
V
BVceo
IC = 200 mA
IB = 0 mA
35
---
V
BVebo
IE = 10 mA
IC = 0 mA
4.0
---
V
Icbo
VCB = 30 V
IE = 0 mA
---
1.0
mA
HFE
VCE = 5 V
IC = 500 mA
10
---
200
---
DYNAM
DYNAMIC
IC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT
f = 30 MHz
PIN = 0.48W
VCE = 28V
30
---
W
GP
f = 30 MHz
PIN = 0.48W
VCE = 28V
18
---
dB
IMD
f = 30 MHz
PIN = 0.48W
VCE = 28V
---
----
-28
dBC
Cob
f = 1 MHz
VCB = 30V
---
65
pf
Conditions V
CE = 28 V
ICQ = 25 mA
相关PDF资料
PDF描述
MS1227 HF BAND, Si, NPN, RF POWER TRANSISTOR
MS1251 VHF BAND, Si, NPN, RF POWER TRANSISTOR
MS1253 VHF BAND, Si, NPN, RF POWER TRANSISTOR
MS1261 UHF BAND, Si, NPN, RF POWER TRANSISTOR
MS1263 UHF BAND, Si, NPN, RF POWER TRANSISTOR
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