参数资料
型号: MS1527
元件分类: 功率晶体管
英文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封装: METAL CERAMIC, M111, 4 PIN
文件页数: 1/4页
文件大小: 119K
代理商: MS1527
MS1527
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS1527 is a gold metallized epitaxial silicon NPN planar
transistor using diffused emitter ballast resistors for superior
ruggedness.
The MS1527 can withstand 20:1 VSWR under rated operating
conditions and is internally input matched to optimize power
gain and efficiency over the band.
ABSOLUTE MAXIMUM
ABSOLUTE MAXIMUM RATINGS
RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
3.5
V
IC
Device Current
3.0
A
PDISS
Power Dissipation
70
W
TJ
Junction Temperature
+200
°°C
TSTG
Storage Temperature
-65 +150
°°C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
2.5
°°C/W
Features
400 MHz
28 VOLTS
P
OUT = 25 WATTS
G
P = 9 dB GAIN MINIMUM
EMITTER BALLASTED
METAL/CERAMIC PACKAGE
INTERNAL INPUT MATCHING
REFRACTORY/GOLD METALIZATION
RF & MICROWAVE TRANSISTORS
UHF COMMUNICATIONS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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