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参数资料
| 型号： | MS2211 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.310 X 0.310 INCH, HERMETIC SEALED, M222, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 178K |
| 代理商： | MS2211 |
MS2211
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION
::
The MS2211 is a silicon NPN bipolar device designed
For specialized avionics applications, including JTIDS, utilizing pulse
formats with short pulse widths and high burst rates or overall duty
cycles.
The MS2211 is housed in a hermetic package and utilizes internal
input impedance matching. Gold metallization and emitter ballasting
assures high reliability under operating conditions.
AABSOLUTE MAXIMUM RATINGS
BSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation* (TC
≤≤ 75°°C)
25
W
IC
Device Current*
0.9
A
VCC
Collector-Supply Voltage
32
V
TJ
Junction Temperature (Pulsed RF Operation)
+250
°°C
TSTG
Storage Temperature
-65 to +200
°°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance*
7.0
°°C/W
* Applies only to rated RF amplifier operation
Features
960-1215 MHz
COMMON BASE
GOLD METALLIZATION
POUT = 6 W MIN. WITH 9.3 dB GAIN
5:1 VSWR CAPABILITY
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
相关PDF资料 |
PDF描述 |
|---|---|
| MS2212 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MS2213 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MS2214 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MS2215 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MS2216 | L BAND, Si, NPN, RF POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MS2211L2 | 制造商:CIT 制造商全称:CIT Relay & Switch 功能描述:CIT SWITCH |
| MS2211L4 | 制造商:CIT 制造商全称:CIT Relay & Switch 功能描述:CIT SWITCH |
| MS2212 | 制造商:Microsemi Corporation 功能描述:MS2212 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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