参数资料
型号: MS2221
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.400 X 0.500 INCH, HERMETIC SEALED, M216, 2 PIN
文件页数: 1/5页
文件大小: 150K
代理商: MS2221
MS2221
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2221 is a high power transistor specifically designed
for L–Band radar pulsed output and driver applications.
This device is designed for operation under moderate pulse
width and duty cycle pulse conditions. Internal impedance
matching provides optimum performance across the entire
frequency band.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation* (TC
≤≤ 100°°C)*
730
W
IC
Device Current*
18.75
A
VCC
Collector Supply Voltage*
55
V
TJ
Junction Temperature (RF Pulsed Operation)
250
°°C
TSTG
Storage Temperature
-65 to +200
°°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance*
0.24
°°C/W
*Applies only to rated RF amplifier operation
Features
1235 - 1365 MHz
50 VOLTS
5:1 VSWR CAPABILITY
INPUT / OUTPUT MATCHING
P
OUT = 270 WATTS
G
P = 6.3 dB MINIMUM
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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