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参数资料
| 型号： | MS2233 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.500 INCH, HERMETIC SEALED, M216, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 157K |
| 代理商： | MS2233 |
MS2233
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2233 is a high power transistor specifically designed
for L–Band radar pulsed output and driver applications.
This device is designed for operation under moderate pulse
width and duty cycle pulse conditions. Internal impedance
matching provides optional performance across the entire
frequency band.
ABSOLUTE MAXIMUM RATI
ABSOLUTE MAXIMUM RATINGS
NGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation* (TC
≤≤ 100°°C)
1250
W
IC
Device Current*
25
A
VCC
Collector Supply Voltage*
45
V
TJ
Junction Temperature
250
°°C
TSTG
Storage Temperature
-65 to +200
°°C
TThermal Data
hermal Data
RTH(J-C)
Junction-case Thermal Resistance
0.10
°°C/W
Features
1200 - 1400 MHz
50 VOLTS
P
OUT = 325 WATTS
G
P = 6.4 dB MINIMUM
15:1 VSWR CAPABILITY
INPUT / OUTPUT MATCHING
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MS-2234 | 制造商:AD 制造商全称:Analog Devices 功能描述:Anatomy of a Digital Isolator |
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