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参数资料
| 型号： | MS2321 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.250 X 0.250 INCH, HERMETIC SEALED, M105, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 200K |
| 代理商： | MS2321 |
MS2321
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DE
DESCRIPTION:
SCRIPTION:
The MS2321 is a gold metallized, silicon NPN power transistor
designed for pulsed applications with low duty cycles such as
IFF, DME and TACAN. Internal impedance matching is utilized
for maximum broadband performance and simplified external matching.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCEO
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
IC
Device Current
1.5
A
PDISS
Power Dissipation
87.5
W
TJ
Junction Temperature
+200
°°C
TSTG
Storage Temperature
-65 to +150
°°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
2.0
°°C/W
Features
DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
20 W (typ.) IFF 1030–1090 MHz
15 W (min.) DME 1025–1150 MHz
15 W (typ.) TACAN 960–1215 MHz
1025 - 1150 MHz
50 VOLT OPERATION
P
OUT = 15 WATTS
G
P = 10 dB MINIMUM
20:1 VSWR CAPABILITY @ RATED CONDITIONS
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MS2322 | 制造商:Microsemi Corporation 功能描述:MS2322 - Bulk |
| MS232A | 制造商:Thomas & Betts 功能描述:MS232A MALE INSERT,SCREW 制造商:Thomas & Betts 功能描述:MALE INSERT,SCREW |
| MS232B | 制造商:Thomas & Betts 功能描述:MS232B INMALE INSERT, SCREWIN 制造商:Thomas & Betts 功能描述:MALE INSERT, SCREW |
| MS2341 | 制造商:Microsemi Corporation 功能描述:MS2341 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MS-2341 | 制造商:AD 制造商全称:Analog Devices 功能描述:Surging Across the Barrier |
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