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参数资料
| 型号： | MS2362 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.250 X 0.250 INCH, HERMETIC SEALED, M105, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 107K |
| 代理商： | MS2362 |
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MS2362
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
DESCRIPTION:
The MS2362 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty cycles such as IFF, DME,
and TACAN. The MS2362 utilizes internal impedance matching for improved broadband
performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCES
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
IC
Device Current
5.5
A
PDISS
Power Dissipation
218.7
W
TJ
Junction Temperature
200
°°C
TSTG
Storage Temperature
-65 to +150
°°C
Features
DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
80 W (typ.) IFF 1030 – 1090 MHz
75 W (min.) DME 1025 – 1150 MHz
50 W (typ.) TACAN 960 – 1215 MHz
1025 - 1150 MHz
GOLD METALLIZATION
P
OUT = 75 WATTS
G
P = 7.5 dB MINIMUM
INTERNAL INPUT MATCHING
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
COMMON BASE CONFIGURATION
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MS23747-13 | 制造商:Amphenol Corporation 功能描述:MS23747-13 - Bulk |
| MS23747-14 | 制造商:Amphenol Corporation 功能描述:10-035885-406 - Bulk |
| MS23747-15 | 制造商:Amphenol Corporation 功能描述:10-035885-407 - Bulk |
| MS23747-16 | 制造商:Amphenol Corporation 功能描述:10-035885-408 - Bulk |
| MS23747-20 | 制造商:Amphenol Corporation 功能描述:GLAND - Bulk |
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