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参数资料
| 型号： | MS2421 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, PLASTIC, M103, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 262K |
| 代理商： | MS2421 |
MS2421
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation
875
W
VCES
Collector-Emitter Voltage
65
V
VCBO
Collector-Base Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
TJ
Junction Temperature
200
C
IC
Device Current
22
A
TSTG
Storage Temperature
-65 to +200
C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
0.20
°°C/W
Features
DESIGNED FOR HIGH POWER PULSED IFF, DME, AND
TACAN APPLICATIONS
350 W (typ.) IFF 1030 – 1090 MHz
300 W (min.) DME 1025 – 1150 MHz
290 W (typ.) TACAN 960 – 1215 MHz
960 – 1215 MHz
GOLD METALLIZATION
P
OUT = 300W MINIMUM
G
P = 6.3 dB MINIMUM
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
EMITTER BALLASTED
COMMON BASE
The MS2421 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME, and TACAN. The MS2421 is designed
with internal input/output matching resulting in improved
broadband performance and low thermal resistance.
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
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