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参数资料
| 型号： | MS2604 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, HERMETIC SEALED, M214, 4 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 119K |
| 代理商： | MS2604 |
12-05-2002
MS2604
RF& MICROWAVE TRANSISTORS
S BAND RADAR APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C)
Symbol
Parameter
Value
Unit
VCC
Collector Supply Voltage
46
V
IC
Device Current
4
A
PDISS
Power Dissipation
100
W
TJ
Junction Temperature
200
°°°°C
TSTG
Storage Temperature
-65 to +200
°°°°C
Thermal Data
RTH(J-C)
Junction - Case Thermal Resistance
2.0
°°°°C/W
Features
2.7 – 3.1 GHz
40 VOLTS
POUT = 25 WATTS
GP = 6.2 dB MINIMUM
GOLD METALLIZATION
INPUT/OUTPUT MATCHING
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2604 is a silicon NPN bipolar transistor designed
for pulsed S-Band radar applications.
The MS2604 is capable of operation over a wide range of
pulse widths and duty cycles. Internal impedance
matching and gold metalization provide consistent
broadband performance and long term reliability.
相关PDF资料 |
PDF描述 |
|---|---|
| MS2607 | S BAND, Si, NPN, RF POWER TRANSISTOR |
| MS2613 | S BAND, Si, NPN, RF POWER TRANSISTOR |
| MS2V-T1S32.000KHZ+/-30PPM | QUARTZ CRYSTAL RESONATOR, 0.032 MHz |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MS2608 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF MICROWAVE TRANSISTOR |
| MS2610 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:臭氧传感器 |
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