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参数资料
| 型号： | MS2362 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.250 X 0.250 INCH, HERMETIC SEALED, M105, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 107K |
| 代理商： | MS2362 |
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2362
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
0.8
°°C/W
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)
C)
STATIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 10 mA
IE = 0 mA
65
---
V
BVCES
IC = 25 mA
VBE = 0 V
65
---
V
BVEBO
IE = 10 mA
IC = 0 mA
3.5
---
V
ICBO
VCE = 50 V
IE = 0 mA
---
5
mA
hFE
VCE = 5 V
IC = 100 mA
10
---
100
---
DYNAMIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
POUT
f =1025 - 1150 MHz
PIN = 13.5 W
VCE = 50V
75
---
W
GP
f =1025 - 1150 MHz
PIN = 13.5 W
VCE = 50V
7.5
---
dB
ηη
C
f =1025 - 1150 MHz
PIN = 13.5 W
VCE = 50V
30
---
%
Conditions:
Pulse Width = 10
s Duty Cycle = 1%
This device is suitable for use under other pulse width/duty cycle conditions.
Please contact the factory for specific applications assistance.
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