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参数资料
| 型号： | MS2552 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, HERMETIC SEALED, METAL CERAMIC, M218, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 193K |
| 代理商： | MS2552 |
Copyright
2000
MSC1665.PDF 12-05-2002
MS2552
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRI PTION
The MS2552 device is a high power pulsed transistor specifically
designed for DME/TACAN avionics applications.
This device is capable of withstanding an infinite load VSWR at any phase
angle under full rated conditions. Low RF thermal resistance and semi-
automatic bonding techniques ensure high reliability and product
consistency.
The MS2552 is housed in the industry-standard AMPAC
metal/ceramic
hermetic package with internal input/output matching structures.
IMPORTANT: For the most current data, visit: http://www.advancedpower.com
KEY FEATU R ES
Refractory/Gold
Metallization
Emitter Ballasted
Ruggedized VSWR
∞ :1
Capability
Input/Output Matching
Overlay Geometry
Metal/Ceramic Hermetic
Package
POUT = 325 W Min.
GP = 6.7 dB Gain
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
SS
S
Avionics Applications
Applies only to rated RF amplifier operation
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°°°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation* (TC ≤ 100
°C)
880
W
IC
Device Current*
24
A
VCC
Collector-Supply Voltage*
55
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
-65 to +150
°C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
0.17
°C/W
MM
SS22
5555
22
.400 X .400 2NLFL
hermetically sealed
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相关代理商/技术参数 |
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|---|---|
| MS2553 | 制造商:Microsemi Corporation 功能描述: |
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