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参数资料
| 型号： | MS2609 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, HERMETIC SEALED, M214, 4 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 121K |
| 代理商： | MS2609 |
12-05-2002
MS2609
RF& MICROWAVE TRANSISTORS
S BAND RADAR APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C)
Symbol
Parameter
Value
Unit
VCC
Collector Supply Voltage
46
V
PDISS
Power Dissipation
167
W
IC
Device Current
8
A
TJ
Junction Temperature
200
°°°°C
TSTG
Storage Temperature
-65 to +200
°°°°C
Therma
Thermal Data
l Data
RTH(J-C)
Junction - Case Thermal Resistance*
1.2
°°°°C/W
Features
2.7 – 3.1 GHz
40 VOLTS
GOLD METALLIZATION
POUT = 50 WATTS
GP = 6 dB MINIMUM
INPUT/OUTPUT MATCHING
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2609 is a silicon NPN bipolar transistor specifically
designed for medium pulse S-Band radar applications.
This device is capable of operation over a wide range of
pulse widths, duty cycles and temperatures.
Gold metalized, intredigitated die geometry provides
superior ruggedness into a 3:1 VSWR at + 1 dB overdrive.
Internal impedance matching and computerized wirebond
insure superior product consistency.
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