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参数资料
| 型号： | MS2609 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, HERMETIC SEALED, M214, 4 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 121K |
| 代理商： | MS2609 |
12-05-2002
MS2609
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°°°°C)
C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO
IC = 25 mA
IE = 0 mA
55
---
V
BVEBO
IE = 5 mA
IC = 0 mA
3.5
---
V
BVCER
IC = 25 mA
RBE = 10
55
---
V
ICES
VCE = 40 V
---
20
mA
HFE
VCE = 5.0 V
IC = 3 A
30
---
200
---
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT
f = 2700- 3100 MHz
PIN = 12.5 W
VCC = 40V
50
---
W
ηηηηc
f = 2700- 3100 MHz
PIN = 12.5 W
VCC = 40V
30
---
%
GPE
f = 2700- 3100 MHz
PIN = 12.5 W
VCC = 40V
6.0
---
dB
Conditions
Pulse width = 100
sec Duty Cycle = 10%
IMPEDANCE DATA
Freq
ZIN(
)
ZCL(
)
2.7 GHz
7.4 + j5.4
7.1 – j8.6
2.9 GHz
7.8 + j3.0
5.4 – j7.4
3.1 GHz
8.0 – j2.0
4.6 – j2.6
PIN = 12.5 W
VCC = 40 V
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