参数资料
型号: MS3023
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: HERMETIC SEALED, M210, 2 PIN
文件页数: 1/4页
文件大小: 172K
代理商: MS3023
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS3023
DESCRIPTION:
The MS3023 is a common base, hermetically sealed silicon NPN
microwave power transistor. This device is designed for Class C
applications in the 1 - 2 GHz frequency range. Gold metalization
and emitter ballasting provide long-term reliability and superior
ruggedness.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°°C)
C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
21.8
W
VCC
Collector-Supply Voltage*
35
V
IC
Device Current*
600
mA
TJ
Junction Temperature
200
C
TSTG
Storage Temperature
-65 to +200
C
THERMAL DATA
RTH(J-C)
Thermal Resistance Junction-case
8.0
°°C/W
**Applies only to rated RF amplifier operation
Features
GOLD METALIZATION
Pout = 3.0 W MINIMUM
2.0 GHz
Gp = 7.8 dB
INFINITE VSWR CAPABLE @ RATED CONDITIONS
HERMETIC PACKAGE
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER
APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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