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参数资料
| 型号： | MS52C1161A |
| 厂商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 131,072-Word × 8-Bit STATIC RAM +2,097,152-Word × 8-Bit One Time PROM(128k字×8位静态RAM+2M×8 OTPROM) |
| 中文描述： | 131,072词× 8位静态RAM 2097152，字× 8位一次性可编程（128K的字× 8位静态RAM的200万× 8 OTPROM） |
| 文件页数： | 5/18页 |
| 文件大小： | 125K |
| 代理商： | MS52C1161A |
MS52C1161A
Absolute Maximum Ratings
Rating
-0.5 to 5.0
-0.5 to 11.5
-0.5* to Vcc+0.5
V
W
°
C
°
C
0.7
Operating Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Unit
V
V
V
Condition
Symbol
V
CC
V
PP
Parameter
Power Supply Voltage
Output Voltage
Power Dissipation
V
O
P
D
T
opr
T
stg
Ta=25
°
C
Respect to GND
-0.5* to Vcc+0.5
-20 to 70
-55 to 125
* -1.2VMin. for pulse width less than 30nS.
Recommended Operating Conditions
V
Input High Voltage
Input Low Voltage
Unit
V
V
Condition
Symbol
V
CC
V
PP
Parameter
Power Supply Voltage
SRAM
Data Retention Voltage
V
CCH
V
IH
V
IL
Min.
2.7
-0.5
Max.
3.6
Vcc+0.5
Typ.
0
0
0
1.5
3.6
2.2
-0.5*
0.4
V
V
V
Vcc=2.7 to 3.6
Input Voltage
V
I
GND
(Ta= -20 to 70
°
C
)
5
Vcc+0.5
* -1.2VMin. for pulse width less than 30nS.
Capacitance
Unit
pF
pF
Condition
V
I
=0V
V
O
=0V
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Input/Output Capacitance
Min.
Max.
10
10
Typ.
(Vcc=3.3V , Ta=25
°
C , f=1MHz)
Note : This parameter is periodically sampled and not 100% tested.
相关PDF资料 |
PDF描述 |
|---|---|
| MS52C1162A | 65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM +1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字×16位或128k字×8位静态RAM+1M字×16位或2M字×8位 OTPROM) |
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| MSB1218A-RT1 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| MSB1218A-ST1 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| MSB1218ART1 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
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