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参数资料
| 型号： | MS52C1161A |
| 厂商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 131,072-Word × 8-Bit STATIC RAM +2,097,152-Word × 8-Bit One Time PROM(128k字×8位静态RAM+2M×8 OTPROM) |
| 中文描述： | 131,072词× 8位静态RAM 2097152，字× 8位一次性可编程（128K的字× 8位静态RAM的200万× 8 OTPROM） |
| 文件页数： | 6/18页 |
| 文件大小： | 125K |
| 代理商： | MS52C1161A |
MS52C1161A
DC Characteristics (1)
(Vcc=3.0V
±
0.3V,Ta=-20 to 70
°
C)
Min.
Typ.
Parameter
Input Leakage
Current
Symbol
Unit
Max.
Output Leakage
Current
μ
A
I
LI
Condition
Output High Voltage
Output Low Voltage
Standby Power
Supply Current
Operating Power
Supply Current
V
OH
V
OL
I
CCA
(SRAM)
I
CCS
1.0
0.4
Vcc-0.5
V
V
I
OH
=
-
500
μ
A
I
OL
=2.1mA
CE
o
=V
IH ,
CE
s
=V
IH
or
OE=V
IH
or
I
LO
WE=V
IL
V
OUT
=0 to V
CC
V
IN
=0 to V
CC
-1.0
1.0
-1.0
μ
A
CE
o
≥
V
CC-
0.2V
CE
s
≥
V
CC-
0.2V
V
IN
=0 to V
CC
I
CCS1
CE
o
=V
IH
CE
s
=V
IH
V
IN
=V
IH
or V
IL
I
CCA
*
(OTP)
10
0.3
μ
A
mA
CE
o
=V
IH
CE
s
=V
IL
V
IN
=V
IH
/V
IL
T
CYC
=100nS
CE
o
≥
V
CC-
0.2V
CE
s
≤
0.2V
OE
≥
V
CC-
0.2V
T
CYC
=1
μ
S
V
IL
≤
0.2V
V
IH
≥
V
CC-
0.2V
CEo=V
IL
CEs=V
IH
V
IN
=V
IH
/V
IL
T
CYC
=100nS
OE=V
IH
V
PP
Power
Supply Current
I
PP
V
PP
=V
CC
35
mA
10
mA
35
mA
10
OE=V
IH
μ
A
* Read Current
6
CE
o
≤
0.2V
CE
s
≥
V
CC-
0.2V
OE
≥
V
CC-
0.2V
T
CYC
=1
μ
S
V
IL
≤
0.2V
V
IH
≥
V
CC-
0.2V
20
mA
相关PDF资料 |
PDF描述 |
|---|---|
| MS52C1162A | 65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM +1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字×16位或128k字×8位静态RAM+1M字×16位或2M字×8位 OTPROM) |
| MSB1218A-RT1 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| MSB1218A-RT1 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| MSB1218A-ST1 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| MSB1218ART1 | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
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