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参数资料
| 型号： | MS52C1162A |
| 厂商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM +1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字×16位或128k字×8位静态RAM+1M字×16位或2M字×8位 OTPROM) |
| 中文描述： | 65,536字× 16位或131,072词× 8位静态RAM 1048576，字× 16位或2097152，字× 8位一次性可编程（64k的字× 16位或128K的字× 8位静态RAM的100万字× 16位或200万字× 8位OTPROM） |
| 文件页数： | 5/19页 |
| 文件大小： | 141K |
| 代理商： | MS52C1162A |
MS52C1162A
Absolute Maximum Ratings
Rating
-0.5 to 5.0
-0.5 to 11.5
-0.5* to Vcc+0.5
V
W
°
C
°
C
0.7
Operating Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
Unit
V
V
V
Condition
Symbol
V
CC
V
PP
Parameter
Power Supply Voltage
Output Voltage
Power Dissipation
V
O
P
D
T
opr
T
stg
Ta=25
°
C
Respect to GND
-0.5* to Vcc+0.5
-20 to 70
-55 to 125
* -1.2VMin. for pulse width less than 30nS.
Recommended Operating Conditions
V
Input High Voltage
Input Low Voltage
Unit
V
V
Condition
Symbol
V
CC
V
PP
Parameter
Power Supply Voltage
SRAM
Data Retention Voltage
V
CCH
V
IH
V
IL
Min.
2.7
-0.5
Max.
3.6
Vcc+0.5
Typ.
0
0
0
1.5
3.6
2.2
-0.5*
0.4
V
V
V
Vcc=2.7 to 3.6
Input Voltage
V
I
GND
(Ta= -20 to 70
°
C
)
5
FUNCTION TABLE (Continued)
OTP Program
OTP Program Inhibit
OTP Program Verify
Operating Mode
CEo CEs
WE
OE
BYTE
/ VPP
VCC
I/O0
- I/O7
D
IN
4.0V
L
H
H
H
H
H
*
*
*
I/O8
- I/O14
D
IN
I/O15
/ A-1
D
IN
High-Z
D
OUT
High-Z
D
OUT
9.75V
H
H
L
High-Z
D
OUT
Vcc+0.5
Note : 1. * = Don't Care ("H" or "L")
2. It is forbidden to apply CEo="L" and CEs="L" simultaneously.
* -1.2VMin. for pulse width less than 30nS.
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