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参数资料
| 型号： | MS652S |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | PLASTIC, M123, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 327K |
| 代理商： | MS652S |
MS652.PDF 12-04-03
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Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Page 2
MS652/MS652S
RF & MICROWAVE TRANSISTORS
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
MS652S
Symbol
Test Conditions
Min.
Typ.
Max.
Units
BVCES
IC = 25 mA
VBE = 0
36
V
BVCEO
IC = 50 mA
IB = 0
16
V
BVCBO
IC = 25 mA
IE = 0
36
V
BVEBO
IE = 5 mA
IC = 0
4.0
V
ICES
VCE =15 V
VBE = 0
1.0
mA
hFE
VCE = 5 V
IC = 200 mA
10
150
DYNAMIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
MS652S
Symbol
Test Conditions
Min.
Typ.
Max.
Units
POUT
f = 512 MHz
VCC = 12.5 V
5
W
GP
f = 512 MHz
VCC = 12.5 V
10
dB
ηη
f = 512 MHz VCC = 12.5 V POUT = 5 W
60
%
COB
f = 1 MHz
VCB = 15 V
15
pF
LARGE SIGNAL IMPEDANCE DATA
Frequency
MHz
ZIN
ZCL
Units
400
1.2 + j0.6
6.5 + j6.5
440
1.2 + j0.9
7.2 + j6.0
470
1.2 + j1.2
7.7 + j5.3
512
1.2 + j1.5
8.3 + j4.5
Conditions
Vcc = 12.5V, Pout = 5W
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