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参数资料
| 型号： | MSARW80G20AS |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 整流器 |
| 英文描述： | 80 A, 200 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 68K |
| 代理商： | MSARW80G20AS |
MSARW80G20A
(MX028)
200 Volts
80 Amps
37 ns
Features
Oxide passivated structure for very low leakage currents
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
available with TXV (MSARW80G20AV) or S-level (MSARW80G20AS)
screening i.a.w. Microsemi internal procedure PS11.50
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
VRRM
200
Volts
Working Peak Reverse Voltage
VRWM
200
Volts
DC Blocking Voltage
VR
200
Volts
Average Rectified Forward Current, Tc
≤ 135°C
IF(ave)
80
Amps
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
IFSM
250
Amps
Junction Temperature Range
Tj
-65 to +200
°C
Storage Temperature Range
Tstg
-65 to +200
°C
Thermal Resistance, Junction to Case
θ
JC
0.8
(typ.0.35)
°C/W
Maximum Ratings @ 25
°°°°C (unless otherwise specified)
Mechanical Outline
Datasheet# MSC1459.pdf rev1
June, 2000
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
ULTRAFAST
RECTIFIER
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