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参数资料
| 型号： | MSASC150H45AS |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 整流器 |
| 英文描述： | 150 A, 45 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 36K |
| 代理商： | MSASC150H45AS |
MSASC150H45A
45 Volts
150 Amps
Features
Platinum/Tungsten schottky barrier for low forward voltage drop
Oxide passivated structure for very low leakage currents
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
TXV-level (MSASC150H45AV) or S-level (MSASC150H45AS)
screening i.a.w. Microsemi Internal Procedure PS 11.50 available
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
VRRM
45
Volts
Working Peak Reverse Voltage
VRWM
45
Volts
DC Blocking Voltage
VR
45
Volts
Average Rectified Forward Current, Tc
≤ 135°C
IF(ave)
150
Amps
derating, forward current, Tc
≥ 135°C
dIF/dT
(3.75)
Amps/
°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
IFSM
500
Amps
Peak Repetitive Reverse Surge Current, tp= 1
s, f= 1kHz
IRRM
2
Amp
Junction Temperature Range
Tj
-65 to +175
°C
Storage Temperature Range
Tstg
-65 to +175
°C
Thermal Resistance, Junction to Case
θ
JC
0.25
°C/W
Maximum Ratings @ 25
°°C (unless otherwise specified)
Mechanical Outline
Datasheet# MSC0876.PDF
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
LOW VOLTAGE
DROP SCHOTTKY
DIODE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MSASC150H45L | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:LOW VOLTAGE DROP SCHOTTKY DIODE |
| MSASC150H45LR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:LOW VOLTAGE DROP SCHOTTKY DIODE |
| MSASC150W100L | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:LOW LEAKAGE SCHOTTKY DIODE |
| MSASC150W100LR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:LOW LEAKAGE SCHOTTKY DIODE |
| MSASC150W45L | 制造商:Microsemi Corporation 功能描述:MSASC150W45L - Bulk |
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