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参数资料
| 型号： | MSC81250M |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, HERMETIC SEALED, METAL CERAMIC, S042, AMPAC-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 代理商： | MSC81250M |
October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermetically sealed
.
REFRACTORY\GOLD METALLIZATION
.
RUGGEDIZED VSWR 20:1
.
INTERNAL INPUT/OUTPUT MATCHING
.
LOW THERMAL RESISTANCE
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 250 W MIN. WITH 6.2 dB GAIN
DESCRIPTION
The MSC81250M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The
MSC81250M
is
housed
in
the
unique
AMPAC
package
with
internal
input/output
matching structures.
PIN CONNECTION
BRANDING
81250M
ORDER CODE
MSC81250M
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 80C)
600
W
IC
Device Current*
17.8
A
VCC
Collector-Supply Voltage*
55
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
0.20
°C/W
*Applies only to rated RF amplifier operation
MSC81250M
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/5
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