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参数资料
| 型号： | MSC82010 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.250 INCH, HERMETIC SEALED, S010, STRIPAC-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 141K |
| 代理商： | MSC82010 |
October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
.
EMITTER BALLASTED
.
VSWR CAPABILITY
∞:1 @ RATED
CONDITIONS
.
HERMETIC STRIPAC PACKAGE
.
POUT
= 10 W MIN. WITH 5.2 dB GAIN @
2.0 GHz
DESCRIPTION
The MSC82010 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC82010 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
PIN CONNECTION
BRANDING
82010
ORDER CODE
MSC82010
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
35
W
IC
Device Current*
1.5
A
VCC
Collector-Supply Voltage*
35
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
5.0
°C/W
*Applies only to rated RF amplifier operation
MSC82010
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/5
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