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参数资料
| 型号： | MSC82010 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.250 INCH, HERMETIC SEALED, S010, STRIPAC-2 |
| 文件页数： | 2/5页 |
| 文件大小： | 141K |
| 代理商： | MSC82010 |
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
POUT
f
= 2.0 GHz
PIN
= 3.0 W
VCC
= 28 V
10
11.5
—
W
ηcf = 2.0 GHz
PIN
= 3.0 W
VCC
= 28 V
35
38
—
%
GP
f
= 2.0 GHz
PIN
= 3.0 W
VCC
= 28 V
5.2
5.8
—
dB
COB
f
= 1 MHz
VCB
= 28 V
—
19
pF
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BVCBO
IC
= 5mA
IE
= 0mA
45
—
V
BVEBO
IE
= 1mA
IC
= 0mA
3.5
—
V
BVCER
IC
= 15mA
RBE
= 10
45
—
V
ICBO
VCB
= 28V
—
5.0
mA
hFE
VCE
= 5V
IC
= 1000mA
15
—
120
—
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs FREQUENCY
COLLECTOR EFFICIENCY vs
FREQUENCY
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
MSC82010
2/5
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相关代理商/技术参数 |
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| MSC82040 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |
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