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| 型号： | MSG36D42 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SSSMINI6-F1, 6 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 717K |
| 代理商： | MSG36D42 |
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Transistors
Publication date: November 2005
SJC00341AED
1
MSG36D42
SiGe HBT type
For low-noise RF amplier
Features
Compatible between high breakdown voltage and high cutoff frequency
Low-noise, high-gain amplication
Two elements incorporated into one package (Each transistor is separated)
SSSMini type package, reduction of the mounting area and assembly cost
Basic Part Number
MSG330D4
+
MSG33002
++
Absolute Maximum Ratings
Ta = 25
aa
°
C
Parameter
Symbol
Rating
Unit
Tr1
Collector-base voltage
(Emitter open)
VCBO
9
V
Collector-emitter voltage
(Base open)
VCEO
6
V
Emitter-base voltage
(Collector open)
VEBO
1
V
Collector current
IC
100
mA
Tr2
Collector-base voltage
(Emitter open)
VCBO
9
V
Collector-emitter voltage
(Base open)
VCEO
6
V
Emitter-base voltage
(Collector open)
VEBO
1
V
Collector current
IC
60
mA
Overall
Total power dissipation *
PT
125
mW
Junction temperature
Tj
TT
125
°
C
Storage temperature
Tstg
TT
–55 to +125
°
C
Note) Copper plate at the collector is 5.0 mm2 on substrate at 10 mm × 12 mm ×
0.8 mm.
Marking Symbol: 6E
Internal Connection
Unit: mm
1: Base (Tr1)
4: Collector (Tr2)
2: Emitter (Tr1)
5: Emitter (Tr2)
3: Base (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
0 to 0.02
6
5
4
1
2
3
1.00
±0.04
(0.10)
0.10
1.00±0.05
Display at No.1 lead
0.80
±0.05
0.10
(0.35) (0.35)
0.37
+0.03 -
0.02
0.12+0.03
-0.02
3
1
2
6
5
4
(C2)
(C1) (E2)
(B2)
(B1) (E1)
Tr2
Tr1
This product complies with the RoHS Directive (EU 2002/95/EC).
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