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参数资料
| 型号： | MSG36D42 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SSSMINI6-F1, 6 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 717K |
| 代理商： | MSG36D42 |
MSG36D42
2
SJC00341AED
Electrical Characteristics
Ta = 25
aa
°
C±3°C
Tr1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB = 9 V, IE = 0
EE
1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 6 V, I
CE
B = 0
1
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 0
C
1
A
Forward current transfer ratio
hFE
hh
VCE = 3 V, I
CE
C = 15 mA
C
100
220
Transition frequency *
fT
ff
VCE = 3 V, I
CE
C = 30 mA, f = 2 GHz
C
14
GHz
Forward transfer gain *
S21e2 VCE = 3 V, I
CE
C = 30 mA, f = 2 GHz
C
3.0
6.0
dB
Noise gure *
NF
VCE = 3 V, I
CE
C = 15 mA, f = 2 GHz
C
1.6
2.2
dB
Collector output capacitance
(Common base, input open circuited) *
Cob
VCB = 3 V, IE = 0, f = 1 MHz
EE
1.0
1.3
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Veried by random sampling
Tr2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB = 9 V, IE = 0
EE
1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 6 V, I
CE
B = 0
1
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 0
C
1
A
Forward current transfer ratio
hFE
hh
VCE = 3 V, I
CE
C = 6 mA
C
100
220
Transition frequency *
fT
ff
VCE = 3 V, I
CE
C = 20 mA, f = 2 GHz
C
19
GHz
Forward transfer gain *
S21e2 VCE = 3 V, I
CE
C = 20 mA, f = 2 GHz
C
7.5
10.5
dB
Noise gure *
NF
VCE = 3 V, I
CE
C = 6 mA, f = 2 GHz
C
1.4
2.0
dB
Collector output capacitance
(Common base, input open circuited) *
Cob
VCB = 3 V, IE = 0, f = 1 MHz
EE
0.3
0.6
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Veried by random sampling
PT T
a
TT
Common characteristics chart
0
40
120
80
0
150
50
100
MSG36D42_PT-Ta
To
tal
power
dissipation
P T
(mW)
Ambient temperature Ta (°C)
This product complies with the RoHS Directive (EU 2002/95/EC).
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