参数资料
型号: MSC82003
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.250 INCH, HERMETIC SEALED, S010, STRIPAC-2
文件页数: 2/5页
文件大小: 170K
代理商: MSC82003
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
POUT
f
= 2.0 GHz
PIN
= 0.5 W
VCC
= 28 V
3.0
3.3
W
ηcf = 2.0 GHz
PIN
= 0.5 W
VCC
= 28 V
35
37
%
GP
f
= 2.0 GHz
PIN
= 0.5 W
VCC
= 28 V
7.8
8.2
dB
COB
f
= 1 MHz
VCB
= 28 V
6.5
pF
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BVCBO
IC
= 1mA
IE
= 0mA
45
V
BVEBO
IE
= 1mA
IC
= 0mA
3.5
V
BVCER
IC
= 5mA
RBE
= 10
45
V
ICBO
VCB
= 28V
1.0
mA
hFE
VCE
= 5V
IC
= 200mA
15
120
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs FREQUENCY
COLLECTOR EFFICIENCY vs
FREQUENCY
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
MSC82003
2/5
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