- 您现在的位置：买卖IC网 > PDF目录97627 > MSD601-RT2 (ON SEMICONDUCTOR) 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MSD601-RT2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-59, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 80K |
| 代理商： | MSD601-RT2 |
NPN General Purpose Amplifier
Transistors Surface Mount
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V(BR)CBO
60
Vdc
Collector–Emitter Voltage
V(BR)CEO
50
Vdc
Emitter–Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current — Continuous
IC
100
mAdc
Collector Current — Peak
IC(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
–55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
V(BR)CEO
50
—
Vdc
Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0)
V(BR)CBO
60
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0)
V(BR)EBO
7.0
—
Vdc
Collector–Base Cutoff Current (VCB = 45 Vdc, IE = 0)
ICBO
—
0.1
Adc
Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
ICEO
—
100
nAdc
DC Current Gain(1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
MSD601–RT1
MSD601–ST1
(VCE = 2.0 Vdc, IC = 100 mAdc)
hFE1
hFE2
210
290
90
340
460
—
Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
—
0.5
Vdc
1. Pulse Test: Pulse Width
≤ 300 s, D.C. ≤ 2%.
DEVICE MARKING
Marking Symbol
YRX
MSD601–RT1
YSX
MSD601–ST1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 3
1
Publication Order Number:
MSD601–RT1/D
MSD601-RT1
MSD601-ST1
*ON Semiconductor Preferred Device
*
CASE 318D–04, STYLE 1
SC–59
2
1
3
COLLECTOR
3
2
BASE
1
EMITTER
相关PDF资料 |
PDF描述 |
|---|---|
| MSG36A51 | 2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| MSM62881 | 8-BIT, MROM, 5 MHz, MICROCONTROLLER |
| MSP500 | 50 V, SILICON, PIN DIODE |
| MSX532 | DSP-CROSSBAR SWITCH, PBGA792 |
| MT-5004 | 500 A, 60 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MSD-601ST1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN General Purpose Amplifier Transistors Surface Mount |
| MSD601-ST1 | 功能描述:两极晶体管 - BJT 100mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MSD-601ST1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN General Purpose Amplifier Transistors Surface Mount |
| MSD601-ST1G | 功能描述:两极晶体管 - BJT SS GP XSTR NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MSD602 | 制造商:ETL 制造商全称:E-Tech Electronics LTD 功能描述:NPN General Purpose Amplifier Transistor Surface Mount |
发布紧急采购，3分钟左右您将得到回复。