参数资料
型号: MSD6100RLRAG
厂商: ON Semiconductor
文件页数: 2/3页
文件大小: 47K
描述: DIODE SW DUAL CC 100V TO-92
产品变化通告: Product Discontinuation 02/Jan/2007
标准包装: 2,000
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 100mA
电流 - 在 Vr 时反向漏电: 5µA @ 100V
电流 - 平均整流 (Io)(每个二极管): 200mA(DC)
电压 - (Vr)(最大): 100V
反向恢复时间(trr): 4ns
二极管类型: 标准
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-226-3、TO-92-3(TO-226AA)成形引线
供应商设备封装: TO-92-3
包装: 带卷 (TR)
MSD6100
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
Breakdown Voltage (I(BR)
= 100
Adc)
V(BR)
100
?
Vdc
Reverse Current
(VR
= 100 Vdc)
(VR
= 50 Vdc)
(VR
= 50 Vdc, T
A
= 125
°C)
IR
?
?
?
5.0
0.1
50
Adc
Forward Voltage
(IF
= 1.0 mAdc)
(IF
= 10 mAdc)
(IF
= 100 mAdc)
VF
0.55
0.67
0.75
0.7
0.82
1.1
Vdc
Capacitance (VR
= 0)
C
?
1.5
pF
Reverse Recovery Time (IF
= I
R
= 10 mAdc, V
R
= 5.0 Vdc, i
rr
= 1.0 mAdc)
trr
?
4.0
ns
TYPICAL CHARACTERISTICS
100
0.1
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
TA
= 85
°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
1.0
0.60
VR, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.7
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 1. Forward Voltage Figure 2. Leakage Current
Figure 3. Capacitance
TA
= ?
°C
TA
= 25
°C
TA
= 150
°C
TA
= 125
°C
TA
= 85
°C
TA
= 55
°C
TA
= 25
°C
I
R
, REVERSE CURRENT (
μ
A)
Curves Applicable to Each Anode
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