参数资料
型号: MUR1020CTPBF
厂商: Vishay Semiconductors
文件页数: 1/8页
文件大小: 154K
描述: DIODE ULT FAST 200V 5A TO220AB
产品目录绘图: TO-220AB Front
其它图纸: TO-220AB Circuit
标准包装: 1,000
系列: FRED Pt™
电压 - 在 If 时为正向 (Vf)(最大): 990mV @ 5A
电流 - 在 Vr 时反向漏电: 10µA @ 200V
电流 - 平均整流 (Io)(每个二极管): 5A
电压 - (Vr)(最大): 200V
反向恢复时间(trr): 35ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
产品目录页面: 1535 (CN2011-ZH PDF)
其它名称: *MUR1020CTPBF
VS-MUR1020CTPBF
VS-MUR1020CTPBF-ND
VSMUR1020CTPBF
VSMUR1020CTPBF-ND
VS-MUR1020CTPbF, VS-MUR1020CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Aug-11
1
Document Number: 94076
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 10 A FRED Pt?
FEATURES
? Ultrafast recovery time
? Low forward voltage drop
? 175 °C operating junction temperature
? Low leakage current
? Compliant to RoHS Directive 2002/95/EC
? Designed and qualified according to
JEDEC-JESD47
? Halogen-free according to IEC 61249-2-21
definition (-N3 only)
DESCRIPTION/APPLICATIONS
VS-MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-220AB
IF(AV)
2 x 5 A
VR
200 V
VF
at I
F
See Electrical table
trr
typ. See Recovery table
TJ
max. 175 °C
Diode variation Common cathode
Anode
13
2
Common
Base
common
cathode
2
cathode
Anode
TO-220AB
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage VRRM
200 V
Average rectified forward current
per leg
I
total device Rated VF(AV)
R, TC
= 149 °C 10
5
A
Non-repetitive peak surge current per leg IFSM
50
Peak repetitive forward current per leg IFM
Rated VR, square wave, 20 kHz
TC
= 149 °C
10
Operating junction and storage temperatures TJ, TStg
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR
= 100 μA 200 - -
V
Forward voltage VF
IF
= 5 A, T
J
= 125 °C - 0.87 0.99
IF
= 10 A, T
J
= 125 °C - 1.02 1.20
IF
= 10 A - 1.12 1.25
Reverse leakage current IR
VR
= V
R
rated - - 10
μA
TJ
= 150 °C, V
R
= V
R
rated - - 250
Junction capacitance CT
VR
= 200 V - 8 - pF
Series inductance LS
Measured lead to lead 5 mm from package body - 8.0 - nH
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